公开(公告)号：US20190148231A1

公开(公告)日：2019-05-16

申请号：US16092763

申请日：2016-05-31

申请人： SUN YAT-SEN UNIVERSITY ,  SUN YAT-SEN UNIVERSITY CARNEGIE MELLON UNIVERSITY SHUNDE INTERNATIONAL JOINT RESEARCH INSTITUTE

发明人： Shaojun LIU ,  Ke ZHANG ,  Deng PENG ,  Heshen WANG ,  Weijing MO ,  Xi LIU ,  Maosen HUANG

IPC分类号： H01L21/77 ,  H01L27/12 ,  H01L29/786

摘要： The invention discloses a MOS transistor for suppressing generation of a photo-induced leakage current in an active channel region, and an application thereof. A fabrication process comprises: forming a source and a drain at both ends of a substrate by ion implantation, fabricating a gate oxide layer in a middle of an upper surface of the substrate; depositing a polysilicon or a metal on the gate oxide layer to form a gate; depositing an isolation layer above the gate, the source, and the drain; etching contact holes above the source and the drain to extract the source and the drain; depositing the metal on the contact holes above the source and the drain; etching the metal on the drain to isolate the source from the drain; and enabling the metal on the source to directly extend to cover the active channel region, so as to block light rays. The MOS transistor proposed by the invention effectively blocks the light rays incident from above the MOS transistor, suppresses generation of the photo-induced leakage current, not only improves off-state characteristics of the transistor, but also improves a working performance of an active address driving circuit.