公开(公告)号：US20120274302A1

公开(公告)日：2012-11-01

申请号：US13539922

申请日：2012-07-02

申请人： Sameer VORA

发明人： Sameer VORA

IPC分类号： G05F3/02

CPC分类号： G01R21/10 ,  H03G3/3036

摘要： A system includes a first circuit and a second circuit. The first circuit includes a first MOS transistor having a gate and a drain. The first circuit is configured to receive a radio frequency (RF) signal at the gate of the first MOS transistor. The drain of the first MOS transistor is configured to output a first current that is proportional to the square of the input voltage of the RF signal while receiving the RF signal. The second circuit includes a second MOS transistor having a source configured to receive a first current from the first circuit. The second MOS transistor is biased in a triode region and has a channel resistance between the source and a drain. The second circuit is configured to output a voltage proportional to the value of the power of the RF signal received by the first circuit.

摘要翻译： 系统包括第一电路和第二电路。 第一电路包括具有栅极和漏极的第一MOS晶体管。 第一电路被配置为在第一MOS晶体管的栅极处接收射频（RF）信号。 第一MOS晶体管的漏极被配置为输出与RF信号的输入电压的平方成正比的第一电流，同时接收RF信号。 第二电路包括具有被配置为从第一电路接收第一电流的源极的第二MOS晶体管。 第二MOS晶体管被偏置在三极管区域中并且在源极和漏极之间具有沟道电阻。 第二电路被配置为输出与由第一电路接收的RF信号的功率的值成比例的电压。