公开(公告)号：US20130129923A1

公开(公告)日：2013-05-23

申请号：US13681108

申请日：2012-11-19

申请人： Samsung Corning Precision Materials Co., Ltd.

发明人： Sooho PARK ,  Seohyun KIM ,  Jeongwoo PARK ,  Taejung PARK ,  Young Zo YOO ,  GunSang YOON ,  Eun-Ho CHOI ,  Myong Woon KIM ,  Bogyeong KIM ,  Hyung Soo SHIN ,  Seung Ho YOO ,  Sang Do LEE ,  Sang Ick LEE ,  Sang Jun YIM

IPC分类号： C07F3/06

CPC分类号： C07F3/06 ,  C23C16/08 ,  C23C16/407

摘要： A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains an alkyl zinc halide having the following formula: R—Zn—X, where R is an alkyl group CnH2n+1, and X is a halogen group. The n is a number ranging from 1 to 4, and the alkyl group is one selected from among a methyl group, an ethyl group, an i-propyl group and a t-butyl group. The halogen group contains one selected from among F, Br, Cl and I. A method of depositing a zinc oxide-based thin film includes loading a substrate into a deposition chamber; and supplying the zinc oxide precursor which contains the above-described alkyl zinc halide and an oxidizer into the deposition chamber and forming a zinc oxide-based thin film on the substrate via chemical vapor deposition. The zinc oxide-based thin film is deposited on the substrate via atmospheric pressure chemical vapor deposition.

摘要翻译： 用于沉积氧化锌基薄膜的氧化锌前体包含具有下式的烷基卤化锌：R-Zn-X，其中R是烷基C n H 2n + 1，X是卤素基团。 n为1〜4的数，烷基为甲基，乙基，异丙基，叔丁基等。 卤素基团包含选自F，Br，Cl和I中的一种。沉积氧化锌基薄膜的方法包括将衬底加载到沉积室中; 并将含有上述烷基卤化锌和氧化剂的氧化锌前体供给到沉积室中，并通过化学气相沉积在衬底上形成氧化锌基薄膜。 氧化锌基薄膜通过大气压化学气相沉积沉积在基板上。