公开(公告)号：US20250089475A1

公开(公告)日：2025-03-13

申请号：US18635753

申请日：2024-04-15

Applicant: Samsung Display Co., LTD.

Inventor： Geun Chul PARK ,  So Young KOO ,  Jong Do KEUM ,  Eok Su KIM ,  Hyung Jun KIM ,  Joon Seok PARK ,  Ae Ran SONG

IPC: H10K59/124 ,  H01L27/12 ,  H10K59/12

Abstract: A display device includes a substrate, a first transistor including a first active layer disposed on the substrate and a first gate electrode disposed on the first active layer, and a first gate insulating layer disposed between the first active layer and the first gate electrode. The first active layer includes an oxide semiconductor containing indium (In) at a content range of about 40 at % to about 54 at %, and the first gate insulating layer has an emission amount range of oxygen (O2) of about 2.48E+19 Molec./cm3 to about 2.76E+19 Molec./cm3, or an emission amount range of nitrogen monoxide (NO) of about 1.04E+20 Molec./cm3 to about 1.15E+20 Molec./cm3 under heat treatment conditions performed at a temperature range of about 50° C. to about 550° C.