公开(公告)号：US11211576B2

公开(公告)日：2021-12-28

申请号：US16777549

申请日：2020-01-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Katsushi Kishimoto ,  Yoon Ho Kang ,  Dong Hoon Kwak

IPC: H01L51/56 ,  H01L51/50 ,  H01L51/52 ,  H01L51/00

Abstract: An organic light-emitting device including an anode electrode, a hole injection layer on the anode electrode, a hole transport layer on the hole injection layer, an emissive layer on the hole transport layer, and a cathode electrode on the emissive layer. A material of the hole injection layer includes a nitrogen-containing compound having a quinoid structure and a nitrogen-containing compound having a benzenoid structure. A ratio of a peak intensity IB to a peak intensity IA (IB/IA) in a Fourier transform infrared spectroscopy (FTIR) spectrum of the material of the hole injection layer ranges from 1.5 to 2.5, the peak intensity IA and the peak intensity IB being further defined.

公开(公告)号：US10573841B2

公开(公告)日：2020-02-25

申请号：US15441717

申请日：2017-02-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Katsushi Kishimoto ,  Yoon Ho Kang ,  Dong Hoon Kwak

IPC: H01L51/00 ,  H01L51/50 ,  H01L51/52 ,  H01L51/56

Abstract: An organic light-emitting device including an anode electrode, a hole injection layer on the anode electrode, a hole transport layer on the hole injection layer, an emissive layer on the hole transport layer, and a cathode electrode on the emissive layer. A material of the hole injection layer includes a nitrogen-containing compound having a quinoid structure and a nitrogen-containing compound having a benzenoid structure. A ratio of a peak intensity IB to a peak intensity IA (IB/IA) in a Fourier transform infrared spectroscopy (FTIR) spectrum of the material of the hole injection layer ranges from 1.5 to 2.5, the peak intensity IA and the peak intensity IB being further defined.

公开(公告)号：US10312443B2

公开(公告)日：2019-06-04

申请号：US14884798

申请日：2015-10-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyang Shik Kong ,  Yoon Ho Kang ,  Dong Hoon Kwak ,  Sung Woong Kim ,  Yool Guk Kim ,  Jae Hoon Kim ,  Ye Seul Na ,  Seok Soon Back ,  Jae Kwon Hwang

IPC: H01L51/54 ,  H01L51/00 ,  H01L51/56 ,  H01L27/32 ,  H01L51/50

Abstract: A method of manufacturing a light-emitting display device, the method including forming a first electrode on a substrate, the substrate including a plurality of pixel regions divided by a non-pixel region, in each of the pixel regions; forming a pixel defining layer, the pixel defining layer having a plurality of pixel openings, each of the pixel openings exposing the first electrode, on the substrate; forming a hole injection layer on the first electrode; forming a lyophilic layer on the hole injection layer to completely overlap the hole injection layer; forming a hole transport layer on the lyophilic layer; forming a light-emitting layer on the hole transport layer; and forming a second electrode on the light-emitting layer.

公开(公告)号：US12191417B2

公开(公告)日：2025-01-07

申请号：US17320925

申请日：2021-05-14

Applicant: Samsung Display Co., LTD.

Inventor： Chang Hee Lee ,  Dong Uk Kim ,  Se Hun Kim ,  Hyo Jin Ko ,  Dong Hoon Kwak ,  Young Il Kim ,  Ji Yoon Kim

IPC: H01L33/20 ,  H01L27/15 ,  H01L33/00 ,  H01L33/38

Abstract: A light emitting element includes a first surface corresponding to an end of the light emitting element, a second surface corresponding to another end of the light emitting element, a first semiconductor layer adjacent to the first surface, the first semiconductor layer including a first type of semiconductor, a second semiconductor layer adjacent to the second surface, the second semiconductor layer including a second type of semiconductor different from the first type of semiconductor, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. An area of the first surface is larger than an area of the second surface, and a distance between the first surface and the second surface is shorter than a length defined by the first surface.

公开(公告)号：US10756309B2

公开(公告)日：2020-08-25

申请号：US16400168

申请日：2019-05-01

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyang Shik Kong ,  Yoon Ho Kang ,  Dong Hoon Kwak ,  Sung Woong Kim ,  Yool Guk Kim ,  Jae Hoon Kim ,  Ye Seul Na ,  Seok Soon Back ,  Jae Kwon Hwang

IPC: H01L51/54 ,  H01L51/56 ,  H01L27/32 ,  H01L51/50

Abstract: A method of manufacturing a light-emitting display device, the method including forming a first electrode on a substrate, the substrate including a plurality of pixel regions divided by a non-pixel region, in each of the pixel regions; forming a pixel defining layer, the pixel defining layer having a plurality of pixel openings, each of the pixel openings exposing the first electrode, on the substrate; forming a hole injection layer on the first electrode; forming a lyophilic layer on the hole injection layer to completely overlap the hole injection layer; forming a hole transport layer on the lyophilic layer; forming a light-emitting layer on the hole transport layer; and forming a second electrode on the light-emitting layer.