公开(公告)号：US20170005119A1

公开(公告)日：2017-01-05

申请号：US14923656

申请日：2015-10-27

Applicant: Samsung Display Co., Ltd.

Inventor： Minjung Kang ,  Daeyoun Park ,  Nuree Um

IPC: H01L27/12 ,  H01L29/786

CPC classification number: G02F1/136209 ,  G02F1/13394 ,  G02F2001/13398 ,  G02F2001/136236

Abstract: A manufacturing method of a thin film transistor substrate includes providing a plurality of pixels each having a display region in which color and a non-display region that is outside the display region on a substrate, forming a black matrix in the non-display region, forming a gate line electrically connected to the plurality of pixels and lengthwise extended in a first direction, in the non-display region, and forming a data line electrically connected to the plurality of pixels and lengthwise extended in a second direction intersecting the first direction, in the non-display region. the forming the black matrix in the non-display region defines a first black matrix disposed to lengthwise overlap the gate line and a second black matrix disposed to lengthwise overlap the data line. An aspect ratio of the second black matrix is greater than that of the first black matrix.

Abstract translation: 薄膜晶体管基板的制造方法包括提供多个像素，每个像素具有在基板上的显示区域之外的颜色和非显示区域的显示区域，在非显示区域中形成黑矩阵， 在所述非显示区域中形成电连接到所述多个像素并沿第一方向纵向延伸的栅极线，并且形成与所述多个像素电连接并沿与​​所述第一方向相交的第二方向纵向延伸的数据线， 在非显示区域。 在非显示区域中形成黑矩阵定义了设置成纵向地重叠栅极线的第一黑矩阵和沿纵向重叠数据线设置的第二黑矩阵。 第二黑矩阵的长宽比大于第一黑矩阵的长宽比。