公开(公告)号：US20250031516A1

公开(公告)日：2025-01-23

申请号：US18639830

申请日：2024-04-18

Applicant: Samsung Display Co., Ltd.

Inventor： HYERIM KIM ,  GYEONGHEON KIM ,  HANBYUL JANG ,  HEEJIN KIM ,  JIHYUN SEO

IPC: H10K50/12 ,  C09K11/06 ,  H10K50/13 ,  H10K85/30 ,  H10K101/30

Abstract: A display device including a circuit layer and a display element layer on the circuit layer and including a light emitting element is provided. The light emitting element includes a first electrode, a first emission layer which includes a first dopant and is provided on the first electrode, a second emission layer which includes a second dopant different from the first dopant and is provided on the first emission layer, and a second electrode provided on the second emission layer. A triplet excited state energy level (T1) of the second dopant may be higher than that of the first dopant, and the thickness of the first emission layer is about 10% to about 50% based on 100% of the sum of the thickness of the first emission layer and the thickness of the second emission layer. The display device may have improved side-surface luminance ratio and excellent display efficiency.

公开(公告)号：US20240130155A1

公开(公告)日：2024-04-18

申请号：US18354878

申请日：2023-07-19

Applicant: Samsung Display Co., LTD.

Inventor： HEEJIN KIM ,  HYERIM KIM ,  HANBYUL JANG ,  NAMWOO KIM ,  Ji Hyun SEO ,  Ja Hyun IM

IPC: H10K50/18 ,  H10K50/15 ,  H10K59/123 ,  H10K59/13 ,  H10K59/40 ,  H10K85/60

CPC classification number: H10K50/181 ,  H10K50/15 ,  H10K59/123 ,  H10K59/13 ,  H10K59/40 ,  H10K85/615 ,  H10K2101/40

Abstract: Embodiments provide a display device that includes a substrate, a transistor disposed on the substrate, and a light emitting device that is electrically connected to the transistor. The light emitting device includes a first electrode that is electrically connected to the transistor, a second electrode disposed on the first electrode, a light emitting layer disposed between the first electrode and the second electrode, a hole transport layer disposed between the first electrode and the light emitting layer, and an electron blocking layer disposed between the hole transport layer and the light emitting layer. Mobility of the hole transport layer is equal to or less than about 2.0*10−3 cm2/(Vs), and a real part of impedance of the light emitting device is equal to or less than about 100Ω, in a frequency range of about 105 Hz to about 106 Hz.