公开(公告)号：US20250024713A1

公开(公告)日：2025-01-16

申请号：US18770523

申请日：2024-07-11

Applicant: Samsung Display Co., Ltd.

Inventor： HYUNEOK SHIN ,  SANGWOOK LEE ,  INSEOK LIM ,  YUNG BIN CHUNG

IPC: H10K59/122 ,  H10K50/155 ,  H10K59/131 ,  H10K59/80 ,  H10K102/00

Abstract: The present disclosure relates to a display panel and a method for manufacturing the same. The display panel according to one or more embodiments of the present disclosure may include a base layer, a pixel-defining film above the base layer, and defining an emission-opening portion, a partition wall including a first partition wall layer above the pixel-defining film, and including a lower partition wall layer including an insulation material, and an upper partition wall layer including a conductive material above the lower partition wall layer, and a second partition wall layer above the first partition wall layer and defining a partition-wall-opening portion overlapping the emission-opening portion, and a light-emitting element including an anode, an intermediate layer contacting the lower partition wall layer and spaced apart from the upper partition wall layer above the anode, and a cathode above the intermediate layer.

公开(公告)号：US20250024720A1

公开(公告)日：2025-01-16

申请号：US18676609

申请日：2024-05-29

Applicant: Samsung Display Co., Ltd.

Inventor： INSEOK LIM ,  SANGWOOK LEE ,  YEOUNGKEOL WOO ,  YUNG BIN CHUNG

IPC: H10K59/131 ,  H10K59/12

Abstract: A display device includes a circuit layer and a light emitting element which is on the circuit layer and connected thereto. The circuit layer includes a transistor, an insulation layer on the transistor ad including a side surface which defines a contact-hole of the insulation layer at which a portion of the transistor is exposed to outside the insulation layer, and an upper surface from which the side surface extends, and a bridge electrode which extends along the side surface of the insulation layer and contacts the portion of the transistor which is exposed to outside the insulation layer. And a connection electrode which connects the light emitting element to the transistor. The connection electrode includes a first connection electrode which is directly on the bridge electrode and spaced apart from the portion of the transistor which is exposed to outside the insulation layer.