公开(公告)号：US20230084087A1

公开(公告)日：2023-03-16

申请号：US17745604

申请日：2022-05-16

Applicant: Samsung Display Co., Ltd.

Inventor： JUNGHO CHOI ,  PILGU KANG ,  SEULONG KIM ,  HAJIN SONG ,  DONGSEOB JEONG ,  YANG-JIN CHO

IPC: H01L51/50 ,  H01L27/32

Abstract: Provided is a light emitting device including a first electrode, a hole transport region on the first electrode, a first light emitting layer on the hole transport region and emitting light of a first wavelength, a second light emitting layer on the hole transport region and emitting light of a second wavelength different from the first wavelength, an electron transport region on the first light emitting layer and the second light emitting layer, and a second electrode on the electron transport region. The second light emitting layer includes a first sub-light emitting layer including a first host having a first hole transporting host and a first electron transporting host and a dopant emitting light of the second wavelength, and a second sub-light emitting layer including a second host and a second hole transporting host, but not including the dopant. The light emitting device provides improved light emitting efficiency.

公开(公告)号：US20240121975A1

公开(公告)日：2024-04-11

申请号：US18339533

申请日：2023-06-22

Applicant: Samsung Display Co., Ltd.

Inventor： JUNGHO CHOI ,  PILGU KANG ,  DONG CHAN KIM ,  JIYOUNG MOON ,  HAKCHOONG LEE

IPC: H10K50/13 ,  H10K50/15 ,  H10K59/38 ,  H10K59/80

CPC classification number: H10K50/13 ,  H10K50/156 ,  H10K59/38 ,  H10K59/80518 ,  H10K2101/30

Abstract: A light emitting device may include a first electrode, a first light emitting stack disposed on the first electrode, a charge generation layer disposed on the first light emitting stack, a second light emitting stack disposed on the charge generation layer, and a second electrode disposed on the second light emitting stack. Each of the first light emitting stack and the second light emitting stack includes a hole transport layer. A hole mobility of the charge generation layer is lower than a hole mobility of the hole transport layer.