公开(公告)号：US20230363219A1

公开(公告)日：2023-11-09

申请号：US18139725

申请日：2023-04-26

Applicant: Samsung Display Co., LTD.

Inventor： Seung Chan LEE ,  Jaechung KIM ,  Beom Soo PARK ,  Seong Jun LEE

IPC: H10K59/131 ,  H10K59/80

CPC classification number: H10K59/131 ,  H10K59/8791

Abstract: A display device includes a substrate including a display area and a component area, and first and second signal lines disposed on the substrate, in which each of the display area and the component area includes a first semiconductor layer, a first gate conductive layer and a second gate conductive layer on the first semiconductor layer, a second semiconductor layer on the second gate conductive layer, a third gate conductive layer on the second semiconductor layer, an insulating layer in which openings surrounding the first semiconductor layer, the second gate conductive layer, the second semiconductor layer and the third gate conductive layer are defined, and first and second data conductive layers on the insulating layer, in which the first signal line in the first data conductive layer and the second signal line in the second data conductive layer respectively extend in perpendicular directions.

公开(公告)号：US20230113895A1

公开(公告)日：2023-04-13

申请号：US17900207

申请日：2022-08-31

Applicant: Samsung Display Co., Ltd.

Inventor： IN-BAE KIM ,  Jaechung KIM ,  SEUNGCHAN LEE ,  JAEIK LIM ,  WONWOO CHOI

IPC: H01L27/32 ,  H01L51/52

Abstract: A display device includes a base layer, a circuit layer including a reinforcing layer disposed on the base layer and transistors disposed on the reinforced layer, where each of the transistors includes a semiconductor pattern including a source, an active, a drain, and a gate, and a display layer including a light-emitting diode connected to the transistors, where the reinforcing layer overlaps three or more actives among actives of the transistors. Some of semiconductor patterns of the transistors include polysilicon, others of the semiconductor patterns of the transistors include oxide, and a distance from the reinforcing layer to a semiconductor pattern including the polysilicon is shorter than a distance from the reinforcing layer to a semiconductor pattern including the oxide.

公开(公告)号：US20230045085A1

公开(公告)日：2023-02-09

申请号：US17709848

申请日：2022-03-31

Applicant: Samsung Display Co., Ltd.

Inventor： WONWOO CHOI ,  Jaechung KIM ,  JAEIK LIM ,  IN-BAE KIM

IPC: H01L27/32

Abstract: A pixel includes a light emitting element including an anode and a cathode, a first transistor connected between the anode and a first power line and switched by a voltage of a node, a second transistor connected between the first transistor connected to the first power line and a data line and switched by a write scan signal, a third transistor connected between the node and the anode and switched by a compensation scan signal, and an insulating layer covering the second and third transistors. A first groove is defined in a portion of the insulating layer adjacent to the third transistor.