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公开(公告)号:US20240263309A1
公开(公告)日:2024-08-08
申请号:US18479233
申请日:2023-10-02
发明人: WOO-SEOK JEON , CHULMIN BAE , Jaehee SEO
IPC分类号: C23C16/455 , C23C16/52
CPC分类号: C23C16/45544 , C23C16/45529 , C23C16/52
摘要: An atomic layer deposition apparatus includes a source gas supply part that supplies multiple source gases, a source gas supply module connected to the source gas supply part, a reaction gas supply part that supplies a reaction gas, a reaction gas supply module connected to the reaction gas supply part and spaced apart from the source gas supply module in a first direction, and a first purge gas supply module disposed between the source gas supply module and the reaction gas supply module.