ATOMIC LAYER DEPOSITION APPARATUS
    1.
    发明公开

    公开(公告)号:US20240263309A1

    公开(公告)日:2024-08-08

    申请号:US18479233

    申请日:2023-10-02

    IPC分类号: C23C16/455 C23C16/52

    摘要: An atomic layer deposition apparatus includes a source gas supply part that supplies multiple source gases, a source gas supply module connected to the source gas supply part, a reaction gas supply part that supplies a reaction gas, a reaction gas supply module connected to the reaction gas supply part and spaced apart from the source gas supply module in a first direction, and a first purge gas supply module disposed between the source gas supply module and the reaction gas supply module.