公开(公告)号：US20230119632A1

公开(公告)日：2023-04-20

申请号：US17970261

申请日：2022-10-20

申请人： Samsung Display Co., Ltd.

发明人： Soongi KWON ,  Wonkyu KWAK ,  Jihyun KA ,  Chulkyu KANG ,  Yangwan KIM ,  Kimyeong EOM ,  Kyonghwan OH ,  Minku LEE ,  Jintae JEONG

IPC分类号： G09G3/3233

摘要： A pixel capable of adjusting a threshold voltage of a driving transistor, the pixel including: a display element configured to emit light during an emission period and including an anode and a cathode, the first transistor including an upper gate and a lower gate and configured to control a magnitude of a driving current flowing to the display element, a storage capacitor connected to the upper gate of the first transistor, and a second transistor configured to be turned on during a data writing period to transmit a data voltage to the first transistor, wherein a lower gate-source voltage of the first transistor has a first voltage level in the data writing period and a second voltage level in the emission period.

公开(公告)号：US20240096276A1

公开(公告)日：2024-03-21

申请号：US18465486

申请日：2023-09-12

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Minwoo Byun ,  Junyong AN ,  Soongi KWON ,  Junyoung MIN ,  Junwon CHOI ,  Chaehan HYUN

IPC分类号： G09G3/3225 ,  G09G3/32

CPC分类号： G09G3/3225 ,  G09G3/32 ,  G09G2300/0426

摘要： Each of a plurality of stages of a gate driving circuit includes a first node controller configured to control voltage levels of a first node and a second node, a second node controller configured to control a voltage level of a third node, and a first output unit configured to output the first voltage or the second voltage as a gate signal according to the voltage levels of the second node and the third node. The first node controller includes a single gate transistor having one gate and a dual gate transistor having a pair of gates disposed in different layers with a semiconductor disposed therebetween.