Abstract:
An organic light emitting diode display including: a substrate; an organic light emitting diode on the substrate; a capping layer on the organic light emitting diode and including a high refractive layer including an inorganic material having a refractive index that is equal to or greater than about 1.7 and equal to or less than about 6.0; and a thin film encapsulation layer covering the capping layer and the organic light emitting diode, the inorganic material including at least one selected from the group consisting of CuI, thallium iodide (TlI), BaS, Cu2O, CuO, BiI, WO3, TiO2, AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MoO3, Ag2O, CdO, CoO, Pr2O3, SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.
Abstract:
An organic light emitting diode (OLED) display according to the present disclosure includes a substrate, a thin film transistor on the substrate, a first electrode on the thin film transistor and electrically coupled to the thin film transistor, an organic emission layer on the first electrode, a second electrode on the organic emission layer, and a capping layer on the second electrode, wherein a thickness of the second electrode is about 65 Å to about 125 Å, and wherein a thickness of the capping layer is about (500*1.88/n) Å to about (700*1.88/n) Å, n being an optical constant of the capping layer.
Abstract:
An organic light emitting element according to an example embodiment of the present disclosure includes: an anode and a cathode facing each other; an emission layer between the anode and the cathode; an electron transfer layer between the emission layer and the cathode; and a buffer layer between the cathode and the electron transfer layer, wherein the buffer layer includes an inorganic metal halide having p-type semiconductor characteristics.
Abstract:
An organic light emitting diode includes: a first electrode and a second electrode that face each other; a middle layer on the first electrode; a hole transport layer on the middle layer; and an emission layer between the hole transport layer and the second electrode, wherein the middle layer includes a bipolar material formed by combining a first material including at least selected from a group 1 element, a group 2 element, a lanthanide metal, with a second material including a halogen element.
Abstract:
According to an embodiment of the present disclosure, an organic light emitting diode includes: a first electrode; a second electrode overlapping the first electrode; an emission layer positioned between the first electrode and the second electrode; an electron injection layer positioned between the emission layer and the second electrode; and an electron injection delay layer positioned between the emission layer and the electron injection layer, wherein the electron injection layer includes a first material made of a metal and a second material made of a metal halide, and the electron injection delay layer has a thickness of about 20 Å to about 140 Å.
Abstract:
According to an embodiment of the present disclosure, an organic light emitting diode includes: a first electrode; a second electrode overlapping the first electrode; an emission layer positioned between the first electrode and the second electrode; an electron injection layer positioned between the emission layer and the second electrode; and an electron injection delay layer positioned between the emission layer and the electron injection layer, wherein the electron injection layer includes a first material made of a metal and a second material made of a metal halide, and the electron injection delay layer has a thickness of about 20 Å to about 140 Å.
Abstract:
An organic light emitting diode display includes: a substrate; an organic light emitting element on the substrate; and a capping layer on the organic light emitting element and including a high refraction layer formed of an inorganic material having a refractive index which is equal to or greater than about 1.7 and equal to or less than about 6.0, wherein the inorganic material includes at least one selected from CuI, thallium iodide (TlI), AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MnI2, FeI2, CoI2, NiI2, aluminum iodide (AlI3), thorium (IV) iodide (ThI4), uranium triiodide (UI3), MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, CuO, Cu2O, WO3, MoO3, SnO2, Nb2O5, Ag2O, CdO, CoO, Pr2O3, Bi2O3, Fe2O3, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.
Abstract:
An organic light emitting element according to an exemplary embodiment of the present disclosure includes a first electrode, a second electrode, an emission layer between the first electrode and the second electrode, an electron injection layer between the second electrode and the emission layer, and a barrier layer between the electron injection layer and the second electrode, wherein a work function of the barrier layer is larger than a work function of the second electrode.
Abstract:
According to an embodiment of the present disclosure, an organic light emitting diode includes: a first electrode; a second electrode overlapping the first electrode; an emission layer positioned between the first electrode and the second electrode; an electron injection layer positioned between the emission layer and the second electrode; and an electron injection delay layer positioned between the emission layer and the electron injection layer, wherein the electron injection layer includes a first material made of a metal and a second material made of a metal halide, and the electron injection delay layer has a thickness of about 20 Å to about 140 Å.
Abstract:
A light emitting diode and a light emitting diode display, the light emitting diode including a first electrode; a second electrode overlapping the first electrode; an emission layer between the first electrode and the second electrode; and an electron injection layer between the second electrode and the emission layer, wherein the electron injection layer includes a lanthanide element, an alkali meta first element, and a halogen second element, and wherein the first element and the second element are included in the electron injection layer in an amount of 1 vol % to 20 vol %, based on a total volume of a material including the lanthanide element, the first element, and the second element.