公开(公告)号：US09012273B2

公开(公告)日：2015-04-21

申请号：US14163873

申请日：2014-01-24

Applicant: Samsung Display Co., Ltd.

Inventor： Zhi-Feng Zhan ,  Seung-Gyu Tae ,  Deok-Hoi Kim

IPC: H01L27/12 ,  H01L49/02 ,  G02F1/1362

CPC classification number: H01L27/1259 ,  G02F1/136213 ,  H01L27/1255 ,  H01L28/87

Abstract: A flat panel display device having increased capacitance and a method of manufacturing the flat panel display device are provided. A flat panel display device includes: a plurality of pixel areas, each located at a crossing region of a gate line, a data line, and a common voltage line; a thin film transistor (TFT) located at a region where the gate line and the data line cross each other, the TFT including a gate electrode, a source electrode, and a drain electrode; and a storage capacitor located at a region where the common voltage line and the drain electrode cross each other, the storage capacitor including first, second, and a third storage electrodes.

Abstract translation: 提供了具有增加的电容的平板显示装置和制造平板显示装置的方法。 平板显示装置包括：多个像素区，分别位于栅极线，数据线和公共电压线的交叉区域; 位于栅极线和数据线彼此交叉的区域的薄膜晶体管（TFT），所述TFT包括栅电极，源电极和漏电极; 以及存储电容器，位于公共电压线和漏极彼此交叉的区域，所述保持电容器包括第一，第二和第三存储电极。

公开(公告)号：US20140141574A1

公开(公告)日：2014-05-22

申请号：US14163873

申请日：2014-01-24

Applicant: Samsung Display Co., Ltd.

Inventor： Zhi-Feng Zhan ,  Seung-Gyu Tae ,  Deok-Hoi Kim

IPC: H01L27/12

CPC classification number: H01L27/1259 ,  G02F1/136213 ,  H01L27/1255 ,  H01L28/87

Abstract: A flat panel display device having increased capacitance and a method of manufacturing the flat panel display device are provided. A flat panel display device includes: a plurality of pixel areas, each located at a crossing region of a gate line, a data line, and a common voltage line; a thin film transistor (TFT) located at a region where the gate line and the data line cross each other, the TFT including a gate electrode, a source electrode, and a drain electrode; and a storage capacitor located at a region where the common voltage line and the drain electrode cross each other, the storage capacitor including first, second, and a third storage electrodes.

Abstract translation: 提供了具有增加的电容的平板显示装置和制造平板显示装置的方法。 平板显示装置包括：多个像素区，分别位于栅极线，数据线和公共电压线的交叉区域; 位于栅极线和数据线彼此交叉的区域的薄膜晶体管（TFT），所述TFT包括栅电极，源电极和漏电极; 以及存储电容器，位于公共电压线和漏极彼此交叉的区域，所述保持电容器包括第一，第二和第三存储电极。

公开(公告)号：US09196737B2

公开(公告)日：2015-11-24

申请号：US13944084

申请日：2013-07-17

Applicant: Samsung Display Co., Ltd.

Inventor： Zhi-Feng Zhan

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/32

CPC classification number: H01L29/78672 ,  H01L27/1255 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/78621 ,  H01L2227/323

Abstract: Provided is a thin film semiconductor device such as an organic light-emitting display which includes a thin film transistor (TFT) having a lightly doped region. The thin film semiconductor includes a substrate, a first active pattern, a first lower conductive pattern, and a first upper conductive pattern. The first active pattern is disposed on the substrate and includes a channel region, a lightly doped region, and a heavily doped region. The first lower conductive pattern is disposed on the first active pattern and covers the channel region. The first upper conductive pattern is disposed on the first lower conductive pattern and covers the channel region and the lightly doped region.

Abstract translation: 提供了一种诸如有机发光显示器的薄膜半导体器件，其包括具有轻掺杂区域的薄膜晶体管（TFT）。 薄膜半导体包括基板，第一有源图案，第一下导电图案和第一上导电图案。 第一有源图案设置在衬底上，并且包括沟道区，轻掺杂区和重掺杂区。 第一下导电图案设置在第一有源图案上并覆盖沟道区。 第一上导电图案设置在第一下导电图案上并覆盖沟道区和轻掺杂区。