公开(公告)号：US20220005837A1

公开(公告)日：2022-01-06

申请号：US17206189

申请日：2021-03-19

申请人： Samsung Display Co., Ltd. ,  Industry-University Cooperation Foundation Hanyang University ERICA Campus

发明人： JOON SEOK PARK ,  SAEROONTER OH ,  MYOUNGHWA KIM ,  SU HYUN KIM ,  YOUNG JOON CHOI ,  JUN HYUNG LIM

IPC分类号： H01L27/12

摘要： A display device may include a substrate, a barrier layer disposed on the substrate and having a trench, an active pattern disposed on the barrier layer, formed of an oxide semiconductor, and including a channel region protruding downward along a profile of the trench, and a source region and a drain region disposed at each end of the channel region, respectively, a gate electrode disposed on the active pattern and overlapping the channel region, a source electrode disposed on the gate electrode and electrically connected to the source region, and a drain electrode disposed on the gate electrode and electrically connected to the drain region.

公开(公告)号：US20240186422A1

公开(公告)日：2024-06-06

申请号：US18242005

申请日：2023-09-05

申请人： Samsung Display Co., Ltd. ,  Industry-University Cooperation Foundation Hanyang University ERICA CAMPUS

发明人： JOON SEOK PARK ,  Saeroonter OH ,  Su Hyun KIM ,  Taeho LEE ,  MYOUNGHWA KIM ,  JUN HYUNG LIM

IPC分类号： H01L29/786 ,  H10K59/121

CPC分类号： H01L29/7869 ,  H10K59/1213

摘要： Provided is a transistor including a first electrode, an active layer disposed under the first electrode and having a hole pattern with at least one hole in the source region, a drain region, and an active region overlapping the first electrode, and a second electrode disposed under the active layer. At least one of the first electrode and the second electrode overlaps the hole pattern. This way, the area of the transistor may be reduced, thereby achieving a display panel having a narrow bezel and reducing parasitic capacitance.

公开(公告)号：US20230263017A1

公开(公告)日：2023-08-17

申请号：US17938658

申请日：2022-10-06

申请人： Samsung Display Co., LTD. ,  Industry-University Cooperation Foundation Hanyang University ERICA Campus

发明人： JOON SEOK PARK ,  Saeroonter Oh ,  Ki Hwan KIM ,  MYOUNGHWA KIM ,  Min Goo KIM ,  JUN HYUNG LIM

IPC分类号： H01L27/32 ,  H01L51/56

CPC分类号： H01L27/3258 ,  H01L51/56 ,  H01L2227/323

摘要： A display device includes: a substrate; a barrier layer on the substrate, and including: a trench area recessed in a direction towards the substrate; and a flat area surrounding the trench area, and having a flat upper surface; and a switching transistor and a driving transistor on the barrier layer. The switching transistor includes: a first active layer on the barrier layer, at least a portion of the first active layer being located at the trench area, the first active layer including a channel area, and a source area and a drain area at opposite sides of the channel area; a first gate electrode on the first active layer; and a first upper electrode and a second upper electrode on and connected to the first active layer.