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公开(公告)号：US20180061865A1
公开(公告)日：2018-03-01
申请号：US15678503
申请日：2017-08-16
发明人： Jae Heung Ha , Jong Woo Kim , Ji Young Moon , Min Ho Oh , Seung Jae Lee , Yoon Hyeung Cho , Young Cheol Joo , Hyeong Joon Kim , Eun-Kil Park , Sang Jin Han
IPC分类号： H01L27/12 , H01L29/49 , H01L29/786
CPC分类号： H01L27/1225 , H01L29/4908 , H01L29/7869
摘要： A thin film transistor array panel includes a substrate, a gate insulating layer, an interface layer, and a semiconductor layer. The gate insulating layer is disposed on the substrate. The interface layer is disposed on the gate insulating layer. The semiconductor layer is disposed on the interface layer. The interface layer includes a fluorinated silicon oxide. The semiconductor layer includes a p-type oxide semiconductor material.
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公开(公告)号：US09741776B2
公开(公告)日：2017-08-22
申请号：US15096713
申请日：2016-04-12
发明人： Jae Heung Ha , Yong Tack Kim , Jong Woo Kim , Ji Young Moon , Min Ho Oh , Seung Jae Lee , Yoon Hyeung Cho
IPC分类号： H01L27/32
CPC分类号： H01L27/3258 , H01L51/5209 , H01L51/5268 , H01L2227/323
摘要： A method for manufacturing an organic light emitting diode display includes forming a thin-film transistor on a substrate, forming a protection layer by using a deposition method on an entire surface of the substrate, and forming an organic light emitting element on the protection layer. Forming the protection layer includes forming a first protection layer, a surface thereof including a first wrinkle, and forming a second protection layer on the first protection layer, a surface thereof including a second wrinkle. A first modulus value of the first protection layer is less than a second modulus value of the second protection layer by at least 300 MPa.
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公开(公告)号：US20170084677A1
公开(公告)日：2017-03-23
申请号：US15096713
申请日：2016-04-12
发明人： Jae Heung HA , Yong Tack Kim , Jong Woo Kim , Ji Young Moon , Min Ho Oh , Seung Jae Lee , Yoon Hyeung Cho
IPC分类号： H01L27/32
CPC分类号： H01L27/3258 , H01L51/5209 , H01L51/5268 , H01L2227/323
摘要： A method for manufacturing an organic light emitting diode display includes forming a thin-film transistor on a substrate, forming a protection layer by using a deposition method on an entire surface of the substrate, and forming an organic light emitting element on the protection layer. Forming the protection layer includes forming a first protection layer, a surface thereof including a first wrinkle, and forming a second protection layer on the first protection layer, a surface thereof including a second wrinkle. A first modulus value of the first protection layer is less than a second modulus value of the second protection layer by at least 300 MPa.
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