公开(公告)号：US20240429307A1

公开(公告)日：2024-12-26

申请号：US18745976

申请日：2024-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Rebecca PARK ,  Mehdi SAREMI ,  Ming HE ,  Muhammed AHOSAN UL KARIM ,  Aravindh KUMAR ,  Harsono SIMKA

IPC: H01L29/66 ,  H01L29/417 ,  H01L29/78

Abstract: Provided are systems, methods, and apparatuses for applying stress in transistors. In one or more examples, the systems, devices, and methods include depositing an epitaxial film on a surface between a first sidewall and a second sidewall of the transistor; depositing a dielectric over the epitaxial film and on the surface between the first sidewall and the second sidewall to increase stress in a silicon channel of the transistor; removing a polysilicon fin between the second sidewall and a third sidewall; and depositing a first metal between the second sidewall and the third sidewall based on removing the polysilicon fin.