公开(公告)号：US20200159884A1

公开(公告)日：2020-05-21

申请号：US16439299

申请日：2019-06-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hwan Kim ,  Jae Hyun Kang ,  Byung Chul Shin ,  Ki Heung Park ,  Seung Weon Paek

IPC: G06F17/50 ,  G06N20/00 ,  G06N5/04

Abstract: Methods of fabricating semiconductor devices are provided. A method of fabricating a semiconductor device includes selecting a target pattern from a target design layout. The target pattern includes: a target net; a target via that is electrically connected to the target net; and a crossing net that is electrically connected to the target via on a different level from the target net. The method includes analyzing a peripheral pattern that is adjacent the target net. Moreover, the method includes generating a redundant net, and a redundant via that electrically connects the redundant net and the crossing net. Related layout design systems are also provided.