公开(公告)号：US20250040132A1

公开(公告)日：2025-01-30

申请号：US18626728

申请日：2024-04-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taeseop Choi ,  Byunghoon Kim ,  Junho Kim ,  Youngwook Park ,  Jiho Park ,  Jungwoo Lee ,  Jihyun Hwang ,  Minho Choi

IPC: H10B12/00

Abstract: A semiconductor device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, where the substrate includes at least one first active pattern in the cell region and a second active pattern in the core region; a first trench defined by the at least one first active pattern; and a second trench defined by the second active pattern, where an inner sidewall of the first trench defines first recesses that extend into the at least one first active pattern, an inner sidewall of the second trench defines second recesses that extend into the second active pattern, a distance between two adjacent first recesses from among the first recesses in the vertical direction corresponds to a first height, a distance between two adjacent second recesses from among the second recesses in the vertical direction corresponds to a second height.