公开(公告)号：US20170154991A1

公开(公告)日：2017-06-01

申请号：US15245549

申请日：2016-08-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongsun Ko ,  Sangjine PARK ,  Hagju CHO ,  Byungjae PARK ,  Jeongnam HAN

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/06

CPC classification number: H01L29/785 ,  H01L21/823821 ,  H01L29/0649 ,  H01L29/42372 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848

Abstract: A semiconductor device may include a pair of active patterns spaced apart from each other in a first direction, a pair of gate electrodes intersecting the pair of the active patterns in a second direction crossing the first direction, gate spacers on sidewalls of the pair of the active patterns, source/drain regions on the pair active patterns between the pair of the gate electrodes, and a spacer protection pattern between the pair of the gate electrodes and between the pair of the active patterns. The spacer protection pattern may be commonly connected to the gate spacers.