公开(公告)号：US20220208965A1

公开(公告)日：2022-06-30

申请号：US17379051

申请日：2021-07-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunki MIN ,  Donghyun ROH ,  Chaeho NA

IPC: H01L29/06 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/092

Abstract: An integrated circuit device includes: a fin-type active region on a substrate and including a fin top surface at a first level; a gate line on the fin-type active region; and an insulating structure on a sidewall of the fin-type active region. The insulating structure includes: a first insulating liner in contact with a sidewall of the fin-type active region; a second insulating liner on the first insulating liner and including an uppermost portion at a second level c than the first level; a lower buried insulating layer facing the sidewall of the fin-type active region and including a first top surface facing the gate line at a third level lower than the second level; and an upper buried insulating layer between the lower buried insulating layer and the gate line and including a second top surface at a fourth level equal to or higher than the second level.