公开(公告)号：US20130270672A1

公开(公告)日：2013-10-17

申请号：US13780146

申请日：2013-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Hee LIM ,  Chan-Seung HWANG

IPC: H01L49/02

CPC classification number: H01L28/60 ,  H01L27/10852 ,  H01L28/91

Abstract: A semiconductor device is provided. The semiconductor device includes first and second storage electrodes formed to be spaced apart from each other on a substrate, an insulating continuous support pattern connected to top surfaces of the first and second storage electrodes, a storage dielectric layer formed to cover the first and second storage electrodes and the continuous support pattern, and a plate electrode formed on the storage dielectric layer. The continuous support pattern includes a first contact part connected to the top surface of the first storage electrode, a second contact part connected to the top surface of the second storage electrode, and a connection part connecting the first and second contact parts with each other.

Abstract translation: 提供半导体器件。 半导体器件包括在基板上形成为彼此间隔开的第一和第二存储电极，连接到第一和第二存储电极的顶表面的绝缘连续支撑图案，形成为覆盖第一和第二存储器 电极和连续支撑图案，以及形成在存储介质层上的平板电极。 连续支撑图案包括连接到第一存储电极的顶表面的第一接触部分，连接到第二存储电极的顶表面的第二接触部分和将第一和第二接触部分彼此连接的连接部分。