公开(公告)号：US20230197742A1

公开(公告)日：2023-06-22

申请号：US18061628

申请日：2022-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong Soon KANG ,  Chang Yong UM ,  Jeong Jin LEE

IPC: H01L27/146

CPC classification number: H01L27/14616 ,  H01L27/14645

Abstract: An image sensor includes a first semiconductor substrate, a photoelectric conversion region in the first semiconductor substrate, and a buried insulating film on the first semiconductor substrate. The buried insulating film covers a first region of the first semiconductor substrate and exposes a second region of the first semiconductor substrate. The sensor includes a second semiconductor substrate on the buried insulating film, an operating gate structure defining a first channel of a first conductive type in the second semiconductor substrate, and a transfer gate structure defining a second channel of a second conductive type different from the first conductive type in the second region of the first semiconductor substrate.