公开(公告)号：US20170025511A1

公开(公告)日：2017-01-26

申请号：US15189312

申请日：2016-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chul Woong LEE ,  Hanseung KWAK ,  Youngmook OH

IPC: H01L29/423 ,  H01L21/8234 ,  H01L27/11 ,  H01L29/06 ,  H01L27/088

CPC classification number: H01L21/823481 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823462 ,  H01L21/823468 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/1104 ,  H01L29/0649

Abstract: Semiconductor devices and methods of fabricating the same are provided. The semiconductor devices may include gate electrodes on a substrate. A longitudinal direction of each of the gate electrodes may extend in a first direction, and ones of the gate electrodes may be arranged in the first direction. The semiconductor devices may also include first and second gate spacers extending in the first direction and on respective sidewalls of the ones of the gate electrodes. The first and second gate spacers may be spaced apart from each other in a second direction that is different from the first direction. The semiconductor devices may further include gate separation patterns, and ones of the gate separation patterns may be between two among the ones of the gate electrodes adjacent to each other in the first direction and between the first and second gate spacers.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件可以在衬底上包括栅电极。 每个栅电极的纵向方向可以在第一方向上延伸，并且栅电极中的一个可以沿第一方向布置。 半导体器件还可以包括在第一方向上延伸的第一和第二栅极间隔件以及栅极电极的相应侧壁。 第一和第二栅极间隔物可以在不同于第一方向的第二方向上彼此间隔开。 半导体器件还可以包括栅极分离图案，并且栅极分离图案中的一个可以在第一方向上彼此相邻的栅电极中的两个之间以及第一和第二栅极间隔物之间​​。

公开(公告)号：US20180151447A1

公开(公告)日：2018-05-31

申请号：US15882190

申请日：2018-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chul Woong LEE ,  Hanseung KWAK ,  Youngmook OH

IPC: H01L21/8234 ,  H01L29/06 ,  H01L27/11

CPC classification number: H01L21/823481 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823462 ,  H01L21/823468 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/1104 ,  H01L29/0649

Abstract: Semiconductor devices and methods of fabricating the same are provided. The semiconductor devices may include gate electrodes on a substrate. A longitudinal direction of each of the gate electrodes may extend in a first direction, and ones of the gate electrodes may be arranged in the first direction. The semiconductor devices may also include first and second gate spacers extending in the first direction and on respective sidewalls of the ones of the gate electrodes. The first and second gate spacers may be spaced apart from each other in a second direction that is different from the first direction. The semiconductor devices may further include gate separation patterns, and ones of the gate separation patterns may be between two among the ones of the gate electrodes adjacent to each other in the first direction and between the first and second gate spacers.