公开(公告)号：US20230019278A1

公开(公告)日：2023-01-19

申请号：US17673880

申请日：2022-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： DONGHYUK YEOM ,  KWAN HEUM LEE ,  SEONGHWA PARK ,  SECHAN LIM

IPC: H01L29/786 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66

Abstract: Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device includes an active pattern on a substrate, a device isolation layer provided on the substrate to define the active pattern, a pair of source/drain patterns on the active pattern and a channel pattern therebetween, the channel pattern including semiconductor patterns which are stacked and are spaced apart from each other, a gate electrode crossing the channel pattern, and a gate spacer on a side surface of the gate electrode. The gate spacer located on the device isolation layer includes an upper portion with a first thickness and a lower portion with a second thickness. The second thickness is larger than the first thickness, and the lower portion of the gate spacer is located at a level lower than the uppermost one of the semiconductor patterns.

公开(公告)号：US20220173253A1

公开(公告)日：2022-06-02

申请号：US17327725

申请日：2021-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONGHYUK YEOM ,  JUNKYUM KIM ,  KWAN HEUM LEE ,  SEONGHWA PARK ,  SOHYUN SEO

IPC: H01L29/786 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66

Abstract: A semiconductor device includes; an active pattern on a substrate, a source/drain pattern on the active pattern, a channel pattern connected to the source/drain pattern and including semiconductor patterns spaced apart in a vertical stack, and a gate electrode extending across the channel pattern. The semiconductor patterns includes a first semiconductor pattern and a second semiconductor pattern. The gate electrode includes a first part between the substrate and the first semiconductor pattern and a second part between the first semiconductor pattern and the second semiconductor pattern. A width of the first part varies with a depth of the first part, such that a width of a middle portion of the first part is less than a width of a lower portion of the first part and a width of an upper portion of the first part.