公开(公告)号：US20200075458A1

公开(公告)日：2020-03-05

申请号：US16366267

申请日：2019-03-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-suk LEE ,  Hak-seung Lee ,  Dong-chan Lim ,  Tae-seong Kim ,  Kwang-jin Moon

IPC: H01L23/48 ,  H01L23/00 ,  H01L21/768 ,  H01L23/532 ,  H01L23/31 ,  H01L23/522 ,  H01L25/18

Abstract: Semiconductor chips and methods of manufacturing the same are provided. The semiconductor chip includes a substrate, an interlayer insulation layer including a bottom interlayer insulation layer on an upper surface of the substrate and a top interlayer insulation layer on the bottom interlayer insulation layer, an etch stop layer between the bottom interlayer insulation layer and the top interlayer insulation layer, a landing pad on the interlayer insulation layer, and a through via connected to the landing pad through the substrate, the interlayer insulation layer, and the etch stop layer. The etch stop layer is isolated from direct contact with the landing pad.