公开(公告)号：US20240128055A1

公开(公告)日：2024-04-18

申请号：US18232992

申请日：2023-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunbae Kim ,  Jihwan Kim ,  Sangki Nam ,  Daeun Son ,  Seungbo Shim ,  Juho Lee ,  Hyunjae Lee ,  Hyunhak Jeong

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32128 ,  H01J2237/0473

Abstract: A method of manufacturing a semiconductor device includes placing a wafer in a plasma chamber, the chamber including a first power generator configured to generate plasma ions in the chamber, and a second power generator configured to accelerate the plasma ions toward the wafer, generating a radio frequency (RF) signal having a repeated periodic sinusoidal waveform in an on state and a steady off state by the first power generator, and generating a direct current (DC) bias signal having a repeated periodic non-sinusoidal waveform in an on state and a steady off state by the second power generator. The RF signal and the DC bias signal are offset from each other. The method further includes performing a plasma process on a layer on the wafer, using the RF signal and DC bias signal.