公开(公告)号：US20210263682A1

公开(公告)日：2021-08-26

申请号：US17032654

申请日：2020-09-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongik JEON ,  Kyungbo YANG ,  Seokwon AHN ,  Hyeonwu KIM

IPC: G06F3/06

Abstract: A storage device may include a non-volatile memory including a plurality of zones, the non-volatile memory configured to sequentially store data in at least one of the plurality of zones, and a processing circuitry configured to, receive a first write command and first data from a host, the first write command including a first logical address, identify a first zone of the plurality of zones based on the first logical address, compress the first data based on compression settings corresponding to the first zone, and write the compressed first data to the first zone.

公开(公告)号：US20240119009A1

公开(公告)日：2024-04-11

申请号：US18135894

申请日：2023-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungbo YANG ,  Hyeonwu KIM ,  Dongik JEON ,  Soonsuk HWANG

IPC: G06F12/10

CPC classification number: G06F12/10

Abstract: A memory controller receives a write request and write data from a host, stores first entry information including a write buffer pointer indicating a location where the write data is temporarily stored in a write buffer and a first logical address corresponding to the write request in an entry buffer, stores an entry index generated based on the first entry information in a first storage space corresponding to the first logical address in a logical-to-physical (L2P) mapping information storage circuit, and updates the entry index stored in the first storage space to a physical address newly mapped to the first logical address as the write data is programmed in a memory device.

公开(公告)号：US20240061618A1

公开(公告)日：2024-02-22

申请号：US18501412

申请日：2023-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongik JEON ,  Kyungbo YANG ,  Seokwon AHN ,  Hyeonwu KIM

IPC: G06F3/06

CPC classification number: G06F3/0659 ,  G06F3/0604 ,  G06F3/0679

Abstract: A storage device may include a non-volatile memory including a plurality of zones, the non-volatile memory configured to sequentially store data in at least one of the plurality of zones, and a processing circuitry configured to, receive a first write command and first data from a host, the first write command including a first logical address, identify a first zone of the plurality of zones based on the first logical address, compress the first data based on compression settings corresponding to the first zone, and write the compressed first data to the first zone.

公开(公告)号：US20230138155A1

公开(公告)日：2023-05-04

申请号：US18148534

申请日：2022-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongik JEON ,  Kyungbo YANG ,  Seokwon AHN ,  Hyeonwu KIM

IPC: G06F3/06

Abstract: A storage device may include a non-volatile memory including a plurality of zones, the non-volatile memory configured to sequentially store data in at least one of the plurality of zones, and a processing circuitry configured to, receive a first write command and first data from a host, the first write command including a first logical address, identify a first zone of the plurality of zones based on the first logical address, compress the first data based on compression settings corresponding to the first zone, and write the compressed first data to the first zone.