公开(公告)号：US12166059B2

公开(公告)日：2024-12-10

申请号：US17725750

申请日：2022-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Jun Choi ,  Won Oh Ryu ,  Hyeon Woo Lee ,  Gyu Hyun Lim

IPC: H01L27/146 ,  H01L23/00 ,  H01L23/48

Abstract: An image sensor comprises a first and second chips. The first chip includes a first semiconductor substrate, a photoelectric conversion layer in the first semiconductor substrate, a color filter, a micro lens, a first transistor adjacent to the photoelectric conversion layer, a first insulating layer, and a first metal layer in the first insulating layer and connected to the first transistor. The second chip includes a second insulating layer, a second semiconductor substrate, a second transistor on the second semiconductor substrate, a second metal layer in the second insulating layer and connected to a gate structure of the second transistor through a gate contact, a landing metal layer below the second metal layer, and a through via in direct contact with the landing metal layer and vertically passing through the second semiconductor substrate. A width of the through via becomes narrower as the width approaches the third surface.