公开(公告)号：US20230043936A1

公开(公告)日：2023-02-09

申请号：US17735292

申请日：2022-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Jin PARK ,  Gyul GO ,  Jun Soo KIM ,  Gyung Hyun YOON ,  Eui Jun CHA ,  Hui-Jung KIM ,  Yoo Sang HWANG

IPC: H01L27/108

Abstract: A semiconductor device and a method for fabricating the same is provided. The semiconductor device includes a lower semiconductor film, a buried insulating film, and an upper semiconductor film which are sequentially stacked; an element isolation film defining an active region inside the substrate and including a material having an etching selectivity with respect to silicon oxide; a first gate trench inside the upper semiconductor film; a first gate electrode filing a part of the first gate trench; a second gate trench inside the element isolation film; and a second gate electrode filling a part of the second gate trench, a bottom side of the element isolation film being inside the lower semiconductor film.