公开(公告)号：US20230402518A1

公开(公告)日：2023-12-14

申请号：US18202085

申请日：2023-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taejin Park ,  Kyujin Kim ,  Bongsoo Kim ,  Huijung Kim ,  Pyung Moon ,  Chulkwon Park ,  Gyunghyun Yoon ,  Heejae Chae

IPC: H01L29/423 ,  H10B12/00 ,  H01L29/49

CPC classification number: H01L29/4236 ,  H10B12/315 ,  H01L29/4916

Abstract: An integrated circuit (IC) device includes a gate trench formed inside a substrate, the gate trench including a bottom portion and a sidewall portion, a gate electrode structure disposed apart from the bottom portion and the sidewall portion of the gate trench, the gate electrode structure including a gate electrode including a first sub-gate electrode formed in a lower portion of the gate trench and a second sub-gate electrode formed on the first sub-gate electrode and a gate capping layer formed on the second sub-gate electrode, and a gate insulating layer formed between the gate trench and the gate electrode structure, the gate insulating layer including a base insulating layer formed between the bottom portion and the sidewall portion of the gate trench and the gate electrode structure and a reinforcing insulating layer formed on a sidewall portion of the second sub-gate electrode.