公开(公告)号：US11374047B2

公开(公告)日：2022-06-28

申请号：US16944286

申请日：2020-07-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SeungSik Kim ,  Sungchul Kim ,  Haeyong Park

IPC: H01L27/146 ,  H04N5/232

Abstract: An image sensor including a substrate having a first, a first device isolation region adjacent to the first surface and defining a unit pixel, a transfer gate on the first surface at an edge of the unit pixel, a photoelectric conversion part in the substrate and adjacent to a first side surface of the transfer gate, and a floating diffusion region in the substrate and adjacent to a second side surface of the transfer gate. The second side surface faces the first side surface. The first device isolation region is spaced apart from the second side surface. The substrate and the first device isolation region are doped with impurities having a first conductivity. A first impurity concentration of the first device isolation region is greater than a second impurity concentration of the substrate.

公开(公告)号：US12148780B2

公开(公告)日：2024-11-19

申请号：US17735605

申请日：2022-05-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Haeyong Park ,  Sungsoo Choi

IPC: H01L27/146 ,  H10K39/32

Abstract: An image sensor includes a substrate having a plurality of pixel regions and a deep device isolation pattern disposed in the substrate between the pixel regions. The pixel regions include first, second, third, and fourth pixel regions, which are adjacent to each other in first and second directions. The deep device isolation pattern includes first portions interposed between the first and second pixel regions and between the third and fourth pixel regions and spaced apart from each other in the second direction, and second portions interposed between the first and third pixel regions and between the second and fourth pixel regions and spaced apart from each other in the first direction. The first pixel region includes a first extended active pattern, which is extended to the second pixel region in the first direction and is disposed between the first portions of the deep device isolation pattern.

公开(公告)号：US20190131328A1

公开(公告)日：2019-05-02

申请号：US16124300

申请日：2018-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： SeungSik Kim ,  Sungchul Kim ,  Haeyong Park

IPC: H01L27/146

Abstract: An image sensor including a substrate having a first, a first device isolation region adjacent to the first surface and defining a unit pixel, a transfer gate on the first surface at an edge of the unit pixel, a photoelectric conversion part in the substrate and adjacent to a first side surface of the transfer gate, and a floating diffusion region in the substrate and adjacent to a second side surface of the transfer gate. The second side surface faces the first side surface. The first device isolation region is spaced apart from the second side surface. The substrate and the first device isolation region are doped with impurities having a first conductivity. A first impurity concentration of the first device isolation region is greater than a second impurity concentration of the substrate.

公开(公告)号：US10770499B2

公开(公告)日：2020-09-08

申请号：US16124300

申请日：2018-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： SeungSik Kim ,  Sungchul Kim ,  Haeyong Park

IPC: H01L27/146 ,  H04N5/232

Abstract: An image sensor including a substrate having a first, a first device isolation region adjacent to the first surface and defining a unit pixel, a transfer gate on the first surface at an edge of the unit pixel, a photoelectric conversion part in the substrate and adjacent to a first side surface of the transfer gate, and a floating diffusion region in the substrate and adjacent to a second side surface of the transfer gate. The second side surface faces the first side surface. The first device isolation region is spaced apart from the second side surface. The substrate and the first device isolation region are doped with impurities having a first conductivity. A first impurity concentration of the first device isolation region is greater than a second impurity concentration of the substrate.