公开(公告)号：US20190035750A1

公开(公告)日：2019-01-31

申请号：US15997338

申请日：2018-06-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Hoon Han ,  Sungjin KIM ,  Junyong NOH ,  Heonjun LIM

IPC: H01L23/00 ,  H01L23/58 ,  H01L21/66 ,  H01L21/78

Abstract: A semiconductor device includes a semiconductor substrate having a chip region and an edge region, a lower dielectric layer on the semiconductor substrate, a chip pad on the lower dielectric layer of the chip region, an upper dielectric layer on the lower dielectric layer, which includes a first opening exposing the chip pad on the chip region and a second opening exposing the lower dielectric layer on the edge region, and a redistribution pad connected to the chip pad. The redistribution pad includes a via portion in the first opening and a pad portion extending from the via portion onto the upper dielectric layer.