公开(公告)号：US20230209814A1

公开(公告)日：2023-06-29

申请号：US17819295

申请日：2022-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonok Jung ,  Hyojin Park ,  Hojin Sung ,  Ji-Eun Lee ,  Young-Seung Cho

IPC: H01L27/108 ,  H01L21/762

CPC classification number: H01L27/10897 ,  H01L27/10844 ,  H01L21/76232 ,  H01L27/10814

Abstract: A semiconductor device includes a substrate having a peripheral region and a cell region therein. A first semiconductor active pattern is provided, which protrudes from the substrate in the peripheral region. A second semiconductor active pattern is provided, which protrudes from the substrate in the cell region. A first edge of an upper portion of the first semiconductor active pattern has a rounded shape, and a second edge of an upper portion of the second semiconductor active pattern has a rounded shape. A curvature of the first edge is greater than a curvature of the second edge.