公开(公告)号：US20230290767A1

公开(公告)日：2023-09-14

申请号：US18051943

申请日：2022-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeha LEE ,  Hyeongkyu Kim

IPC: H01L27/02 ,  G06F30/31

CPC classification number: H01L27/0207 ,  G06F30/31

Abstract: A semiconductor device including a standard cell including active patterns extending in a first direction, gate patterns extending in a second direction perpendicular to the first direction, and contact patterns being on the active patterns at opposite sides of the gate patterns, and interconnection line patterns extending in the first direction and spaced apart from each other in the second direction, on the stand cell may be provided. The standard cell may include first and second standard cells that partially overlap each other. A first special boundary may be defined on a cell boundary of the second standard cell in the first standard cell, and a second special boundary may be defined on a cell boundary of the first standard cell in the second standard cell. At least one of the interconnection line patterns of the first standard cell may be spaced apart from the first special boundary.