公开(公告)号：US20150022948A1

公开(公告)日：2015-01-22

申请号：US14319259

申请日：2014-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo-Joon AN ,  Youngjin CHO ,  Youn-Ho HWANG

IPC: H01G4/005

CPC classification number: H01L23/5223 ,  H01G4/012 ,  H01G4/232 ,  H01G4/30 ,  H01G4/33 ,  H01L27/0629 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A capacitor structure includes a first electrode structure and a second electrode structure. The first electrode structure includes a first negative plate and a first positive plate spaced apart from each other. The first electrode structure has a first horizontal capacitance between the first negative plate and the first positive plate. The second electrode structure includes a second positive plate and a second negative plate spaced apart from each other on the first electrode structure. The second electrode structure has a second horizontal capacitance between the second negative plate and the second positive plate. First and second vertical capacitances are formed between the first negative plate and the second positive plate and between the first positive plate and the second negative plate.

Abstract translation: 电容器结构包括第一电极结构和第二电极结构。 第一电极结构包括彼此间隔开的第一负极板和第一正极板。 第一电极结构在第一负极板和第一正极板之间具有第一水平电容。 第二电极结构包括在第一电极结构上彼此间隔开的第二正极板和第二负极板。 第二电极结构在第二负极板和第二正极板之间具有第二水平电容。 第一和第二垂直电容形成在第一负极板和第二正极板之间以及第一正极板和第二负极板之间。