公开(公告)号：US20220311382A1

公开(公告)日：2022-09-29

申请号：US17539408

申请日：2021-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongchang Choi ,  Sungjoon Park ,  Hyoeun Park ,  Youngchang An ,  Hyotae Choo ,  Somin Lee

IPC: H03B5/12

Abstract: A variable capacitor circuit includes a capacitor block including a first varactor element comprising a first transistor having a first size, a second varactor element comprising a second transistor having a second size different from the first size, a first terminal commonly connected to a source and a drain of the first transistor, a second terminal commonly connected to a source and a drain of the second transistor, and an RC circuit connected to a gate of the first transistor and a gate of the second transistor.

公开(公告)号：US11677353B2

公开(公告)日：2023-06-13

申请号：US17539408

申请日：2021-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongchang Choi ,  Sungjoon Park ,  Hyoeun Park ,  Youngchang An ,  Hyotae Choo ,  Somin Lee

IPC: H03B5/12

CPC classification number: H03B5/1206 ,  H03B5/1253 ,  H03B2200/004 ,  H03B2200/0086

Abstract: A variable capacitor circuit includes a capacitor block including a first varactor element comprising a first transistor having a first size, a second varactor element comprising a second transistor having a second size different from the first size, a first terminal commonly connected to a source and a drain of the first transistor, a second terminal commonly connected to a source and a drain of the second transistor, and an RC circuit connected to a gate of the first transistor and a gate of the second transistor.