-
公开(公告)号:US20230005954A1
公开(公告)日:2023-01-05
申请号:US17736384
申请日:2022-05-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jung-Hwan LEE , Hyun Min CHO
IPC: H01L27/11582
Abstract: A nonvolatile memory device with improved reliability is provided. The nonvolatile memory device comprises a substrate, a mold structure including a plurality of word lines stacked on the substrate, a first word line cut region configured to cut the mold structure, a first channel structure spaced apart from the first word line cut region by a first distance, and disposed in the mold structure and the substrate, and a second channel structure spaced apart from the first word line cut region by a second distance, and disposed in the mold structure and the substrate, wherein the second distance is greater than the first distance, a first width of the first channel structure is different from a second width of the second channel structure, and a first length of the first channel structure is different from a second length of the second channel structure.