公开(公告)号：US20130036943A1

公开(公告)日：2013-02-14

申请号：US13650819

申请日：2012-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-baek SEON ,  Hyun-Jae KIM ,  Sang-Yoon LEE ,  Myung-kwan RYU ,  Hyun-Soo SHIN ,  Kyung-Bae PARK ,  Woong-Hee JEONG ,  Gun-hee KIM ,  Byung-Du AHN

IPC: C09D5/00

CPC classification number: H01L29/7869

Abstract: A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.

Abstract translation: 用于形成氧化物薄膜的溶液组合物可以包括包含锌的第一化合物，包括铟的第二化合物和包含镁或铪的第三化合物，并且电子器件可以包括包含锌，铟和镁的氧化物半导体。 锌和铪可以以约1:0.01至约1:1的原子比包括在内。