公开(公告)号：US20190067278A1

公开(公告)日：2019-02-28

申请号：US15952798

申请日：2018-04-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeoungwon Seo ,  Wonsok Lee ,  Min Hee Cho ,  Hyun-Sook Byun

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L29/423 ,  H01L29/49

Abstract: A semiconductor device includes a substrate including an active region defined by a device isolation layer. A word line structure is in a trench formed in an upper portion of the substrate. The word line structure includes a gate insulation pattern covering an inner surface of the trench. A gate electrode pattern is on the gate insulation pattern. A first work function pattern is between the gate insulation pattern and the gate electrode pattern. A second work function pattern is on the first work function pattern and extends along a side surface of the gate electrode pattern. The first work function pattern has a top surface at a level below that of a bottom surface of the gate electrode pattern. The first work function pattern has a work function greater than that of the second work function pattern.

公开(公告)号：US10811408B2

公开(公告)日：2020-10-20

申请号：US15952798

申请日：2018-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeoungwon Seo ,  Wonsok Lee ,  Min Hee Cho ,  Hyun-Sook Byun

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/49 ,  H01L29/423 ,  H01L29/78

Abstract: A semiconductor device includes a substrate including an active region defined by a device isolation layer. A word line structure is in a trench formed in an upper portion of the substrate. The word line structure includes a gate insulation pattern covering an inner surface of the trench. A gate electrode pattern is on the gate insulation pattern. A first work function pattern is between the gate insulation pattern and the gate electrode pattern. A second work function pattern is on the first work function pattern and extends along a side surface of the gate electrode pattern. The first work function pattern has a top surface at a level below that of a bottom surface of the gate electrode pattern. The first work function pattern has a work function greater than that of the second work function pattern.