公开(公告)号：US20140127872A1

公开(公告)日：2014-05-08

申请号：US14150006

申请日：2014-01-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Woo Oh ,  Sang-Hoon LEE ,  Sung-Bong KIM ,  Hyung-Suk LEE

IPC: H01L29/66

CPC classification number: H01L29/66795 ,  H01L29/785 ,  H01L29/7854

Abstract: A method of fabricating a fin field effect transistor may include forming a fin portion protruding from a substrate, forming a device isolation layer to cover a lower sidewall of the fin portion, forming a semiconductor layer using an epitaxial method to cover an upper sidewall and a top surface of the fin portion, selectively etching an upper portion of the device isolation layer to form a gap region between a top surface of the device isolation layer and a bottom surface of the semiconductor layer, and forming a gate electrode pattern on the semiconductor layer to fill the gap region. Related devices are also described.

Abstract translation: 制造鳍状场效应晶体管的方法可以包括形成从衬底突出的鳍部，形成器件隔离层以覆盖鳍部的下侧壁，使用外延法形成半导体层以覆盖上侧壁和 选择性地蚀刻器件隔离层的上部以在器件隔离层的顶表面和半导体层的底表面之间形成间隙区域，并在半导体层上形成栅电极图案 填补空白区域。 还描述了相关设备。