公开(公告)号：US20220180040A1

公开(公告)日：2022-06-09

申请号：US17539697

申请日：2021-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghwan KIM ,  Insu JANG ,  Hyeonhwa JANG ,  Ghilgeun OH

IPC: G06F30/398 ,  G06F30/392 ,  G06F30/394

Abstract: Provided is a method of detecting a defective layer. A method, performed by a computing system, of detecting a defective layer of a semiconductor device including a plurality of layers includes obtaining candidate defective layer information regarding a plurality of candidate defective layers and obtaining physical structure information regarding the candidate defective layers, dividing each of wires in the candidate defective layers into virtual micro areas based on the candidate defective layer information and based on the physical structure information, and identifying a defective layer from among the candidate defective layers according to a number of the virtual micro areas.