公开(公告)号：US20220187365A1

公开(公告)日：2022-06-16

申请号：US17335963

申请日：2021-06-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HWANGJU SONG ,  JAEEUN YOON ,  JISEOK LEE ,  SANGWON HWANG

IPC: G01R31/317 ,  G11C16/04 ,  G11C16/08 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00

Abstract: A memory device includes; a memory cell array including memory cells, a row decoder selecting a word line in response to a received address, and control logic including a sensing capacitor having a size proportional to a size of a word line capacitor associated with the selected word line. The control logic measures line resistance of the selected word line by precharging the selected word line, performing a charge sharing operation between the selected word line and the sensing capacitor following the precharging of the selected word line, and measuring a voltage of the sensing capacitor following the performing of the charge sharing operation.

公开(公告)号：US20240256175A1

公开(公告)日：2024-08-01

申请号：US18391566

申请日：2023-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： JISEOK LEE ,  SANGWON HWANG ,  HYUNYOUNG LEE

IPC: G06F3/06

CPC classification number: G06F3/0656 ,  G06F3/0604 ,  G06F3/0679

Abstract: A storage device which includes a nonvolatile memory device that includes a memory circuit storing first device information and that operates based on the first device information, a storage controller that controls the nonvolatile memory device, and a buffer memory that stores map data managed by the storage controller and stores second device information being a backup of the first device information. The first device information includes information about an operation parameter and an operation frequency of the nonvolatile memory device. The storage controller further performs a recovery operation on the first device information stored in the memory circuit of the nonvolatile memory device, based on the second device information stored in the buffer memory.