公开(公告)号：US10134856B2

公开(公告)日：2018-11-20

申请号：US15254297

申请日：2016-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Da-Il Eom ,  Jeong-Ik Kim ,  Ja-Hum Ku ,  Chul-Sung Kim ,  Jun-Ki Park ,  Sang-Jin Hyun

IPC: H01L29/417 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/84 ,  H01L29/66 ,  H01L27/092 ,  H01L27/12

Abstract: A semiconductor device includes an active fin partially protruding from an isolation pattern on a substrate, a gate structure on the active fin, a source/drain layer on a portion of the active fin adjacent to the gate structure, a source/drain layer on a portion of the active fin adjacent to the gate structure, a metal silicide pattern on the source/drain layer, and a plug on the metal silicide pattern. The plug includes a second metal pattern, a metal nitride pattern contacting an upper surface of the metal silicide pattern and covering a bottom and a sidewall of the second metal pattern, and a first metal pattern on the metal silicide pattern, the first metal pattern covering an outer sidewall of the metal nitride pattern. A nitrogen concentration of the first metal pattern gradually decreases according to a distance from the outer sidewall of the metal nitride pattern.