公开(公告)号：US20240421212A1

公开(公告)日：2024-12-19

申请号：US18642987

申请日：2024-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo Seok Park ,  Jae Ho Jeon ,  Sung Gi Hur

IPC: H01L29/66 ,  H01L29/06

Abstract: There is provided a semiconductor device capable of improving element performance and reliability. The semiconductor device may include an active pattern that includes a lower pattern extending in a first direction on a substrate and a sheet pattern on the lower pattern, a field insulating layer that defines the active pattern on the substrate, a gate structure on the lower pattern and including a gate insulating layer and a gate electrode, the gate electrode extending in a second direction perpendicular to the first direction, a gate spacer at least partially surrounding the gate structure and including a first portion on a sidewall of the gate structure and a second portion on a bottom surface of the gate structure, and a source/drain pattern on the lower pattern and in contact with the sheet pattern.