公开(公告)号：US10529734B2

公开(公告)日：2020-01-07

申请号：US15869766

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Lee Eun Ku ,  Jae Ho Jeong ,  Woo Sung Yang ,  Jung Hwan Lee ,  In Su Noh ,  Sun Young Lee

IPC: H01L27/1157 ,  H01L27/11565 ,  H01L27/11524 ,  H01L27/11519 ,  H01L27/11582

Abstract: A semiconductor device can include a semiconductor substrate having a memory cell region and a pad region that is adjacent to the memory cell region, the pad region can include a first pad region, a second pad region between the memory cell region and the first pad region, and a buffer region that is between the first and second pad regions. A separation source structure can include a first portion and a second portion that are parallel to each other in a plan view of the semiconductor device. A first source structure and a second source structure can be disposed between the first and second portions of the separation source structure, where the first and second source structures can have end portions that oppose each other, the first source structure being disposed in the first pad region, and the second source structure being disposed in the second pad region. A gate group can be disposed in the memory cell region and the pad region between the first and second portions of the separation source structure, where each of the end portions of the first and second source structures has a planar shape, and a width of each end portion increases and then decreases as each of the end portions extends toward the other.

公开(公告)号：US11201168B2

公开(公告)日：2021-12-14

申请号：US16735085

申请日：2020-01-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Lee Eun Ku ,  Jae Ho Jeong ,  Woo Sung Yang ,  Jung Hwan Lee ,  In Su Noh ,  Sun Young Lee

IPC: H01L27/1157 ,  H01L27/11565 ,  H01L27/11519 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/11575 ,  H01L27/11573

Abstract: A semiconductor device includes a structure including gate electrodes and interlayer insulating layers alternately stacked on an upper surface of a substrate, trenches passing through the structure; and a groove passing through a portion of the structure. The gate electrodes include word lines, and first and second select lines. The word lines are stacked in a vertical direction upwardly from the upper surface of the substrate. The first and second select lines are on the word lines, and are spaced apart from each other in a first horizontal direction parallel to the upper surface of the substrate. The trenches include a first trench and a second trench spaced apart from the first trench. The groove is on the word lines. The groove and a portion of the first trench are between the first select line and the second select line. The second trench is spaced apart from the select lines.