公开(公告)号：US11728410B2

公开(公告)日：2023-08-15

申请号：US17339144

申请日：2021-06-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin A. Kim ,  Ho-In Ryu ,  Jae Won Na

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L29/6656 ,  H01L29/0642 ,  H01L29/4236

Abstract: A semiconductor device includes a substrate having a trench, a conductive pattern in the trench, a spacer structure on a side surface of the conductive pattern, and a buried contact including a first portion apart from the conductive pattern by the spacer structure and filling a contact recess, and a second portion on the first portion having a pillar shape with a width smaller than that of a top surface of the first portion. The spacer structure includes a first spacer extending along the second portion of the buried contact on the first portion of the buried contact and contacting the buried contact, a second spacer extending along the first spacer, and a third spacer extending along the side surface of the conductive pattern and the trench and apart from the first spacer by the second spacer, the first spacer includes silicon oxide, and the second spacer includes silicon nitride.