公开(公告)号：US20220005763A1

公开(公告)日：2022-01-06

申请号：US17480615

申请日：2021-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jangho LEE ,  Jongmin BAEK ,  Wookyung YOU ,  Kyu-Hee HAN ,  Suhyun BARK

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522

Abstract: Disclosed is a semiconductor device comprising a substrate, a first dielectric layer on the substrate, a first lower conductive line in the first dielectric layer, an etch stop layer on the first dielectric layer, a via-structure that penetrates the etch stop layer and connects to the first lower conductive line, a second dielectric layer on the etch stop layer, and an upper conductive line that penetrates the second dielectric layer and connects to the via-structure. The first dielectric layer includes a dielectric pattern at a level higher than a top surface of the first lower conductive line. The upper conductive line is in contact with a top surface of the etch stop layer. The etch stop layer has at an upper portion a rounded surface in contact with the via-structure.

公开(公告)号：US20210005551A1

公开(公告)日：2021-01-07

申请号：US16793366

申请日：2020-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jangho LEE ,  Jongmin Baek ,  Wookyung YOU ,  Kyu-Hee HAN ,  Suhyun Bark

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522

Abstract: Disclosed is a semiconductor device comprising a substrate, a first dielectric layer on the substrate, a first lower conductive line in the first dielectric layer, an etch stop layer on the first dielectric layer, a via-structure that penetrates the etch stop layer and connects to the first lower conductive line, a second dielectric layer on the etch stop layer, and an upper conductive line that penetrates the second dielectric layer and connects to the via-structure. The first dielectric layer includes a dielectric pattern at a level higher than a top surface of the first lower conductive line. The upper conductive line is in contact with a top surface of the etch stop layer. The etch stop layer has at an upper portion a rounded surface in contact with the via-structure.