公开(公告)号：US20240304501A1

公开(公告)日：2024-09-12

申请号：US18382998

申请日：2023-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jhong Kwon KIM ,  Yong Ju JEON ,  Ki Hun KIM ,  Da Young MYOUNG ,  Jeong-Su HA

IPC: H01L21/66 ,  G01N21/95

CPC classification number: H01L22/12 ,  G01N21/9501

Abstract: A method for fabricating a semiconductor device is provided. The method for fabricating the semiconductor device includes a first step of loading a first wafer including a plurality of semiconductor chips having the same pattern on a stage of a wafer inspection apparatus, a second step of inspecting the plurality of semiconductor chips using light having different wavelengths from each other, and a third step of unloading the first wafer from the stage of the wafer inspection apparatus, wherein inspecting of the plurality of semiconductor chips using the light includes inspecting patterns at the same first positions of the respective semiconductor chips, inspecting patterns at the same second positions of the respective semiconductor chips, inspecting patterns at the same k-th positions of the respective semiconductor chips, and determining the semiconductor chip having a pattern defect by combining pattern inspection results at each of the first to k-th positions.