公开(公告)号：US20220130737A1

公开(公告)日：2022-04-28

申请号：US17236018

申请日：2021-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Doo KIM ,  Sang Do PARK

IPC: H01L23/48 ,  H01L23/528 ,  H01L23/522

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate which comprises a first surface and a second surface opposing each other, a hard macro which is disposed on the first surface of the substrate, comprises a cell area and a halo area formed along the periphery of the cell area, and comprises a first connection wiring disposed at a first metal level and having at least a part extending from the cell area to the halo area, a first power rail which is disposed on the second surface of the substrate and receives a first voltage, and a first through via which penetrates the halo area and the substrate to connect the first power rail and the first connection wiring and is a single structure.